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Freescale Semiconductor Technical Data
Document Number: MRF8S19140H www..com Rev. 0, 5/2010
RF Power Field Effect Transistors
N--Channel Enhancement--Mode Lateral MOSFETs
Designed for CDMA, W--CDMA and LTE base station applications with frequencies from 1930 to 1990 MHz. Can be used in Class AB and Class C for all typical cellular base station modulation formats. * Typical Single--Carrier W--CDMA Performance: VDD = 28 Volts, IDQ = 1100 mA, Pout = 34 Watts Avg., IQ Magnitude Clipping, Channel Bandwidth = 3.84 MHz, Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF.
Frequency 1930 MHz 1960 MHz 1990 MHz Gps (dB) 18.8 19.1 19.3 D (%) 31.7 31.4 31.5 Output PAR (dB) 6.4 6.5 6.5 ACPR (dBc) --38.5 --38.8 --38.8
MRF8S19140HR3 MRF8S19140HSR3
1930-1990 MHz, 34 W AVG., 28 V CDMA, W-CDMA, LTE LATERAL N-CHANNEL RF POWER MOSFETs
* Capable of Handling 10:1 VSWR, @ 32 Vdc, 1960 MHz, 191 Watts CW Output Power (3 dB Input Overdrive from Rated Pout) * Typical Pout @ 1 dB Compression Point 138 Watts CW Features * 100% PAR Tested for Guaranteed Output Power Capability * Characterized with Series Equivalent Large--Signal Impedance Parameters and Common Source S--Parameters * Internally Matched for Ease of Use * Integrated ESD Protection * Greater Negative Gate--Source Voltage Range for Improved Class C Operation * Designed for Digital Predistortion Error Correction Systems * Optimized for Doherty Applications * RoHS Compliant * In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel. Table 1. Maximum Ratings
Rating Drain--Source Voltage Gate--Source Voltage Operating Voltage Storage Temperature Range Case Operating Temperature Operating Junction Temperature
(1,2)
CASE 465-06, STYLE 1 NI-780 MRF8S19140HR3
CASE 465A-06, STYLE 1 NI-780S MRF8S19140HSR3
Symbol VDSS VGS VDD Tstg TC TJ
Value --0.5, +65 --6.0, +10 32, +0 --65 to +150 150 225
Unit Vdc Vdc Vdc C C C
Table 2. Thermal Characteristics
Characteristic Thermal Resistance, Junction to Case Case Temperature 75C, 34 W CW, 28 Vdc, IDQ = 1100 mA, 1960 MHz Case Temperature 80C, 140 W CW, 28 Vdc, IDQ = 1100 mA, 1960 MHz Symbol RJC Value (2,3) 0.48 0.45 Unit C/W
1. Continuous use at maximum temperature will affect MTTF. 2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF calculators by product. 3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers.Go to http://www.freescale.com/rf. Select Documentation/Application Notes -- AN1955.
(c) Freescale Semiconductor, Inc., 2010. All rights reserved.
MRF8S19140HR3 MRF8S19140HSR3 1
RF Device Data Freescale Semiconductor
Table 3. ESD Protection Characteristics
Test Methodology Human Body Model (per JESD22--A114) Machine Model (per EIA/JESD22--A115) Charge Device Model (per JESD22--C101) Class 2 (Minimum) A (Minimum) IV (Minimum)
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Table 4. Electrical Characteristics (TA = 25C unless otherwise noted)
Characteristic Off Characteristics Zero Gate Voltage Drain Leakage Current (VDS = 65 Vdc, VGS = 0 Vdc) Zero Gate Voltage Drain Leakage Current (VDS = 28 Vdc, VGS = 0 Vdc) Gate--Source Leakage Current (VGS = 5 Vdc, VDS = 0 Vdc) On Characteristics Gate Threshold Voltage (VDS = 10 Vdc, ID = 200 Adc) Gate Quiescent Voltage (VDD = 28 Vdc, ID = 1100 mAdc, Measured in Functional Test) Drain--Source On--Voltage (VGS = 10 Vdc, ID = 3 Adc) VGS(th) VGS(Q) VDS(on) 1.0 1.9 0.1 1.8 2.6 0.24 2.5 3.4 0.3 Vdc Vdc Vdc IDSS IDSS IGSS -- -- -- -- -- -- 10 1 1 Adc Adc Adc Symbol Min Typ Max Unit
Functional Tests (1) (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ = 1100 mA, Pout = 34 W Avg., f = 1960 MHz, Single--Carrier W--CDMA, IQ Magnitude Clipping, Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF. ACPR measured in 3.84 MHz Channel Bandwidth @ 5 MHz Offset. Power Gain Drain Efficiency Output Peak--to--Average Ratio @ 0.01% Probability on CCDF Adjacent Channel Power Ratio Input Return Loss Gps D PAR ACPR IRL 18.0 30.0 5.9 -- -- 19.1 31.4 6.5 --38.8 --24 21.0 -- -- --37.5 --7 dB % dB dBc dB
Typical Broadband Performance (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ = 1100 mA, Pout = 34 W Avg., Single--Carrier W--CDMA, IQ Magnitude Clipping, Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF. ACPR measured in 3.84 MHz Channel Bandwidth @ 5 MHz Offset. Frequency 1930 MHz 1960 MHz 1990 MHz 1. Part internally matched both on input and output. (continued) Gps (dB) 18.8 19.1 19.3 D (%) 31.7 31.4 31.5 Output PAR (dB) 6.4 6.5 6.5 ACPR (dBc) --38.5 --38.8 --38.8 IRL (dB) --24 --24 --15
MRF8S19140HR3 MRF8S19140HSR3 2 RF Device Data Freescale Semiconductor
Table 4. Electrical Characteristics (TA = 25C unless otherwise noted) (continued)
Characteristic Pout @ 1 dB Compression Point, CW IMD Symmetry @ 55 W PEP, Pout where IMD Third Order Intermodulation 30 dBc (Delta IMD Third Order Intermodulation between Upper and Lower Sidebands > 2 dB) VBW Resonance Point (IMD Third Order Intermodulation Inflection Point) Gain Flatness in 60 MHz Bandwidth @ Pout = 34 W Avg. Gain Variation over Temperature (--30C to +85C) Output Power Variation over Temperature (--30C to +85C) Symbol P1dB IMDsym Min -- -- Typ 138 15
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Max -- --
Unit W MHz
Typical Performances (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ = 1100 mA, 1930--1990 MHz Bandwidth
VBWres GF G P1dB
-- -- -- --
68 0.5 0.017 0.010
-- -- -- --
MHz dB dB/C dBm/C
MRF8S19140HR3 MRF8S19140HSR3 RF Device Data Freescale Semiconductor 3
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C10 C15* C16* C4 C17* C18*
C11
C12
R2 C14
C8 C2 C7 R1
C1 CUT OUT AREA
C6
C13 C5 C9 MRF8S19140 Rev. 4
C3
*Stacked
Figure 1. MRF8S19140HR3(HSR3) Test Circuit Component Layout
Table 5. MRF8S19140HR3(HSR3) Test Circuit Component Designations and Values
Part C1, C2, C3, C4, C5, C6 C7, C8, C9 C10, C11 C12 C13 C14 C15, C17 C16, C18 R1 R2 PCB Description 10 pF Chip Capacitors 0.8 pF Chip Capacitors 10 F, 50 V Chip Capacitors 330 F, 63 V Electrolytic Capacitor 6.8 F, 50 V Chip Capacitor 47 F, 16 V Tantalum Capacitor .01 F, 100 V Chip Capacitors .56 F, 50 V Chip Capacitors 5.1 , 1/8 W Chip Resistor 4.75 , 1/4 W Chip Resistor 0.030, r = 2.55 Part Number ATC100B110JT500XT ATC800B0R8BT500XT GRM55DR61H106KA88L MCRH63V337M13X21--RH C4532X7R1H685KT T491D476K016AT C1825C103K1GACTU C1825C564J5RACTU CRCW08055R10JNEA CRCW12064R75FNEA AD255A Manufacturer ATC ATC Murata Multicomp TDK Kemet Kemet Kemet Vishay Vishay Arlon
MRF8S19140HR3 MRF8S19140HSR3 4 RF Device Data Freescale Semiconductor
TYPICAL CHARACTERISTICS
VDD = 28 Vdc, Pout = 34 W (Avg.) IDQ = 1100 mA Single--Carrier W--CDMA 3.84 MHz Channel Bandwidth Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF PARC IRL ACPR 1900 1920 1940 1960 1980 2000 2020 f, FREQUENCY (MHz) D, DRAIN EFFICIENCY (%) 20 19.8 19.6 Gps, POWER GAIN (dB) 19.4 19.2 19 18.8 18.6 18.4 18.2 18 1880 D Gps 36 34 32 30 28 --34 --35 ACPR (dBc) --36 --37 --38 --39 2040
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IRL, INPUT RETURN LOSS (dB)
0 --7 --14 --21 --28 --35
0 --0.5 --1 --1.5 --2 --2.5 PARC (dB)
Figure 2. Output Peak- -Average Ratio Compression (PARC) -toBroadband Performance @ Pout = 34 Watts Avg.
--10 --20 --30 --40 --50 --60
IMD, INTERMODULATION DISTORTION (dBc)
VDD = 28 Vdc, Pout = 55 W (PEP), IDQ = 1100 mA Two--Tone Measurements (f1 + f2)/2 = Center Frequency of 1960 MHz IM3--U IM3--L IM5--U IM5--L IM7--L IM7--U 1 10 TWO--TONE SPACING (MHz) 100
Figure 3. Intermodulation Distortion Products versus Two-Tone Spacing
20 OUTPUT COMPRESSION AT 0.01% PROBABILITY ON CCDF (dB) 19 Gps, POWER GAIN (dB) 18 17 16 15 14 1 0 --1 --2 ACPR --3 --4 --5 --2 dB = 45 W --3 dB = 61 W Gps 57 D, DRAIN EFFICIENCY (%) 51 45 39 33 27 PARC 80 100 120 21 --50 --20 --25 --30 --35 --40 --45 ACPR (dBc)
VDD = 28 Vdc, IDQ = 1100 mA, f = 1960 MHz, Single--Carrier W--CDMA, 3.84 MHz Channel Bandwidth --1 dB = 33 W D
Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF 20 40 60
Pout, OUTPUT POWER (WATTS)
Figure 4. Output Peak- -Average Ratio -toCompression (PARC) versus Output Power
MRF8S19140HR3 MRF8S19140HSR3 RF Device Data Freescale Semiconductor 5
TYPICAL CHARACTERISTICS
22 20 Gps, POWER GAIN (dB) 18 16 14 1990 MHz 12 10 1 10 Pout, OUTPUT POWER (WATTS) AVG. 1960 MHz 1930 MHz 100 10 0 300 1960 MHz 1930 MHz 1990 MHz 30 Gps 20 VDD = 28 Vdc, IDQ = 1100 mA, Single--Carrier W--CDMA 3.84 MHz Channel Bandwidth, Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF 60 D 50 D, DRAIN EFFICIENCY (%) 0 --10 --20 --30 --40 --50 --60 ACPR (dBc)
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ACPR 40
Figure 5. Single-Carrier W-CDMA Power Gain, Drain Efficiency and ACPR versus Output Power
24 20 16 GAIN (dB) 12 8 4 0 1460 VDD = 28 Vdc Pin = 0 dBm IDQ = 1100 mA 1585 1710 1835 1960 2085 2210 2335 IRL Gain 0 --5 --10 --15 --20 --25 --30 2460 IRL (dB) 3.84 MHz Channel BW
f, FREQUENCY (MHz)
Figure 6. Broadband Frequency Response
W-CDMA TEST SIGNAL
100 10 PROBABILITY (%) 1 Input Signal 0.1 (dB) W--CDMA. ACPR Measured in 3.84 MHz Channel Bandwidth @ 5 MHz Offset. Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF 0 1 2 3 4 5 6 7 8 9 10 PEAK--TO--AVERAGE (dB) 0.01 0.001 0.0001 10 0 --10 --20 --30 --40 --50 --60 --70 --80 --90 --100 --9 --7.2 --5.4 --3.6 --1.8 0 1.8 3.6 5.4 7.2 9 f, FREQUENCY (MHz) --ACPR in 3.84 MHz Integrated BW +ACPR in 3.84 MHz Integrated BW
Figure 7. CCDF W-CDMA IQ Magnitude Clipping, Single-Carrier Test Signal MRF8S19140HR3 MRF8S19140HSR3 6
Figure 8. Single-Carrier W-CDMA Spectrum RF Device Data Freescale Semiconductor
VDD = 28 Vdc, IDQ = 1100 mA, Pout = 34 W Avg. f MHz 1880 1900 1920 1940 1960 1980 2000 2020 2040 Zsource 4.27 -- j3.42 4.33 -- j3.32 4.40 -- j3.22 4.47 -- j3.12 4.54 -- j3.02 4.61 -- j2.93 4.69 -- j2.84 4.73 -- j2.80 4.63 -- j2.80 Zload 1.62 -- j3.54 1.61 -- j3.45 1.61 -- j3.36 1.60 -- j3.27 1.60 -- j3.18 1.60 -- j3.09 1.59 -- j3.00 1.59 -- j2.96 1.59 -- j2.96
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Zsource = Test circuit impedance as measured from gate to ground. Zload = Test circuit impedance as measured from drain to ground. Device Under Test Output Matching Network
Input Matching Network
Z
source
Z
load
Figure 9. Series Equivalent Source and Load Impedance
MRF8S19140HR3 MRF8S19140HSR3 RF Device Data Freescale Semiconductor 7
ALTERNATIVE PEAK TUNE LOAD PULL CHARACTERISTICS
VDD = 28 Vdc, IDQ = 1100 mA, Pulsed CW, 10 sec(on) 10% Duty Cycle Ideal
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58 57 Pout, OUTPUT POWER (dBm) 56 55 54 53 52 51 50 49 48 47 29 30
1990 MHz
Actual 1930 MHz 1960 MHz 1930 MHz 1960 MHz 1990 MHz
31
32
33
34
35
36
37
38
39
40
Pin, INPUT POWER (dBm) NOTE: Load Pull Test Fixture Tuned for Peak P1dB Output Power @ 28 V f (MHz) 1930 1960 1990 P1dB Watts 170 165 166 dBm 52.3 52.2 52.2 207 205 203 P3dB Watts dBm 53.1 53.1 53.1
Test Impedances per Compression Level f (MHz) 1930 1960 1990 P1dB P1dB P1dB Zsource 4.97 -- j5.89 7.33 -- j5.00 8.82 -- j5.01 Zload 1.28 -- j2.16 1.18 -- j2.04 1.04 -- j2.68
Figure 10. Pulsed CW Output Power versus Input Power @ 28 V
MRF8S19140HR3 MRF8S19140HSR3 8 RF Device Data Freescale Semiconductor
PACKAGE DIMENSIONS
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MRF8S19140HR3 MRF8S19140HSR3 10 RF Device Data Freescale Semiconductor
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MRF8S19140HR3 MRF8S19140HSR3 12 RF Device Data Freescale Semiconductor
PRODUCT DOCUMENTATION AND SOFTWARE
Refer to the following documents, tools and software to aid your design process. Application Notes * AN1955: Thermal Measurement Methodology of RF Power Amplifiers Engineering Bulletins * EB212: Using Data Sheet Impedances for RF LDMOS Devices Software * Electromigration MTTF Calculator * RF High Power Model * .s2p File
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For Software, do a Part Number search at http://www.freescale.com, and select the "Part Number" link. Go to the Software & Tools tab on the part's Product Summary page to download the respective tool.
REVISION HISTORY
The following table summarizes revisions to this document.
Revision 0 Date May 2010 * Initial Release of Data Sheet Description
MRF8S19140HR3 MRF8S19140HSR3 RF Device Data Freescale Semiconductor 13
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MRF8S19140HR3 MRF8S19140HSR3
Rev. 14 0, 5/2010 Document Number: MRF8S19140H
RF Device Data Freescale Semiconductor

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